RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet
January 2002
50A, 60V, 0.022 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49018.
Features
• 50A, 60V
• r
DS(ON)
= 0.022
Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
Symbol
D
Ordering Information
PART NUMBER
RFG50N06
RFP50N06
RF1S50N06SM
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
RFG50N06
RFP50N06
F1S50N06
S
G
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
RFG50N06, RFP50N06, RF1S50N06SM Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
