RGF1A-RGF1M
RGF1A - RGF1M
Features
•
•
•
•
•
•
Glass passivated junction.
For surface mounted application.
Low forward voltage drop.
High current capability.
Easy pick and place.
High surge current capability.
3.93
3.73
0.181 (4.597)
0.157 (3.988)
0.062 (1.575)
0.055 (1.397)
2
1
0.114 (2.896)
0.098 (2.489)
0.208 (5.283)
0.188 (4.775)
1.67
1.47
SMA/DO-214AC
+
2.38
2.18
5.49
5.29
Minimum Recommended
Land Pattern
COLOR BAND DENOTES CATHODE
0.096 (2.438)
0.078 (1.981)
0.060 (1.524)
0.030 (0.762)
0.008 (0.203)
0.002 (0.051)
0.012 (0.305)
0.006 (0.152)
1.0 Ampere Fast Recovery Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
P
D
R
θJA
R
θJL
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Average Rectified Current
@ T
L
= 125°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient **
Thermal Resistance, Junction to Lead**
Storage Temperature Range
Operating Junction Temperature
Value
1.0
Units
A
30
1.76
11.7
85
28
-65 to +175
-65 to +175
A
W
mW/°C
°C/W
°C/W
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Parameter
1A
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current
@ rated V
R
T
A
= 25°C
T
A
= 125°C
Maximum Forward Voltage @ 1.0 A
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
1998
Fairchild Semiconductor International
T
A
= 25°C unless otherwise noted
Device
1B
100
70
100
1D
200
140
200
1G
400
280
400
5.0
100
1.3
150
8.5
250
500
1J
600
420
600
1K
800
560
800
1M
1000
700
1000
50
35
50
Units
V
V
V
µA
µA
V
nS
pF
RGF1A-RGF1M, Rev. E
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
