RHRG30120
Data Sheet
January 2002
30A, 1200V Hyperfast Diode
The RHRG30120 is a hyperfast diode with soft recovery
characteristics (t
rr
< 65ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of high frequency switching
power supplies and other power switching applications. Its
low stored charge and hyperfast soft recovery minimize
ringing and electrical noise in many power switching circuits,
thus reducing power loss in the switching transistors.
Formerly developmental type TA49041.
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <65ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RHRG30120
PACKAGE
TO-247
BRAND
RHRG30120
Packaging
JEDEC STYLE TO-247
ANODE
CATHODE
NOTE: When ordering, use the entire part number.
Symbol
K
CATHODE
(BOTTOM SIDE
METAL)
A
Absolute Maximum Ratings
T
C
= 25
o
C
RHRG30120
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 78
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
125
30
-65 to 175
W
mJ
o
C
UNITS
V
V
V
A
1200
1200
1200
30
60
A
300
A
©2002 Fairchild Semiconductor Corporation
RHRG30120 Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
