RS1A-RS1M
Discrete POWER & Signal
Technologies
RS1A - RS1M
0.181 (4.597)
0.157 (3.988)
Features
•
•
•
Glass passivated junction.
For surface mounted applications.
Built in strain relief, ideal for automated
placement.
0.062 (1.575)
0.055 (1.397)
2
1
0.114 (2.896)
0.098 (2.489)
0.208 (5.283)
0.188 (4.775)
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
0.096 (2.438)
0.078 (1.981)
1.0 Ampere Fast Recovery Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
T
A
= 25°C unless otherwise noted
0.060 (1.524)
0.030 (0.762)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
Parameter
Average Rectified Current
@ T
A
= 100°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient **
Thermal Resistance, Junction to Case **
Storage Temperature Range
Operating Junction Temperature
Value
1.0
Units
A
30
1.19
9.5
105
32
-55 to +150
-55 to +150
A
W
mW/°C
°C/W
°C/W
°C
°C
P
D
R
θJA
R
θJC
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Parameter
1A
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current
@ rated V
R
T
A
= 25°C
T
A
= 125°C
Maximum Forward Voltage @ 1.0 A
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
50
35
50
T
A
= 25°C unless otherwise noted
Device
1B
100
70
100
1D
200
140
200
1G
400
280
400
5.0
50
1.3
150
10
250
500
1J
600
420
600
1K
800
560
800
1M
1000
700
1000
Units
V
V
V
µA
µA
V
nS
pF
©1999
Fairchild Semiconductor Corporation
RS1A-RS1M, Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
