MUR8100E, RURP8100
Data Sheet
December 2002
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes
(t
rr
< 75ns) with soft recovery characteristics. They have a
low forward voltage drop and are of planar, silicon nitride
passivated, ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast recovery with soft recovery
characteristics minimize ringing and electrical noise in many
power switching circuits, thus reducing power loss in the
switching transistor.
Formerly developmental type TA09617.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <75ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
MUR8100E
RURP8100
PACKAGE
TO-220AC
TO-220AC
BRAND
MU8100
RURP8100
Packaging
JEDEC TO-220AC
ANODE
CATHODE
CATHODE
(FLANGE)
NOTE: When ordering, use entire part number.
Symbol
K
A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
MUR8100E
RURP8100
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 155
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave 1 Phase 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
1000
1000
1000
8
16
100
75
20
-55 to 175
©2002 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
