Advanced Power MOSFET
FEATURES
!
Avalanche Rugged Technology
!
Rugged Gate Oxide Technology
!
Lower Input Capacitance
!
Improved Gate Charge
o
!
175 C Operating Temperature
!
Extended Safe Operating Area
!
Lower Leakage Current : 10
µA
(Max.) @ V
DS
= -100V
!
Lower R
DS(ON)
: 0.161
Ω
(Typ.)
SFF9140
BV
DSS
= -100 V
R
DS(on)
= 0.2
Ω
I
D
= -13.2 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,
1/8”
from case for 5-seconds
o
2
O
1
O
1
O
3
O
o
o
Value
-100
-13.2
-9.2
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ C
o
53
+
20
_
580
-13.2
8.0
-6.5
80
0.53
- 55 to +175
o
C
300
Thermal Resistance
Symbol
R
θJC
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
1.88
40
Units
o
C/W
Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
