SGW15N60RUF
1800
1500
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Cies
Capacitance [pF]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 15A
T
C
= 25℃
━━
T
C
= 125℃ ------
Ton
1200
Switching Time [ns]
100
Tr
900
Coes
600
Cres
300
0
1
10
10
1
10
100
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Switching Time [ns]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 15A
T
C
= 25℃
━━
T
C
= 125℃ ------
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 15A
T
C
= 25℃
━━
T
C
= 125℃ ------
Switching Loss [uJ]
Toff
1000
Eoff
Eon
Eoff
Toff
Tf
Tf
100
100
1
10
100
1
10
100
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V
GE
=
±
15V, R
G
= 13
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
Common Emitter
V
GE
=
±
15V, R
G
= 13
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
Switching Time [ns]
Ton
100
Switching Time [ns]
Tr
Toff
Tf
Toff
100
Tf
10
5
10
15
20
25
30
5
10
15
20
25
30
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGW15N60RUF Rev. A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
