Si3443DV
April 2001
Si3443DV
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the larger packages are impractical.
Features
-4 A, -20 V. R
DS(ON)
= 0.065
Ω
@ V
GS
= -4.5 V
R
DS(ON)
= 0.100
Ω
@ V
GS
= -2.5 V
Fast switching speed.
Low gate charge (7.2nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
Applications
Load switch
Battery protection
Power management
D
D
S
1
6
2
5
SuperSOT
TM
-6
D
D
G
3
4
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
Parameter
Ratings
-20
(Note 1)
(Note 1a)
(Note 1a)
(Note 1b)
Units
V
V
A
W
°C
±8
-4
-20
1.6
0.8
-55 to +150
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
.443
Device
Si3443DV
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
Si3443DV, REV A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
