SI9426DY
January 2001
SI9426DY
Single N-Channel, 2.5V Specified MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s high cell density
DMOS technology process that has been especially
tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching
performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint package.
Features
•
10.5 A, 20 V.
R
DS(ON)
= 13.5 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 16 mΩ @ V
GS
= 2.7 V
•
•
High cell density for extremely low R
DS(ON)
High power and current handling capability in a widely
used surface mount package
Applications
•
•
DC/DC converter
Load switch
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
20
±8
(Note 1a)
Units
V
V
A
W
10.5
30
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
9426
Device
SI9426DY
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
SI9426DY Rev A (W)
2001
Fairchild Semiconductor International
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
