Si9936DY
June 1999
Si9936DY*
Dual N-Channel Enhancement Mode MOSFET
General Description
These N-Channel Enhancement Mode MOSFETs are
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
5.0 A, 30 V. R
DS(ON)
= 0.050
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.080
Ω
@ V
GS
= 4.5 V
Low gate charge.
Fast switching speed.
High power and current handling capability.
Applications
Battery switch
Load switch
Motor controls
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©1999
Fairchild Semiconductor Corporation
Si9936DY Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
