SS12-S100
SS12 - S100
Features
•
•
•
Glass passivated junctions.
High current capability, low V
F
.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
1.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
I
F(AV)
I
FSM
P
D
R
θJA
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Average Rectified Current
.375 " lead length @ T
A
= 75°C
Non-repetitive Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient **
Storage Temperature Range
Operating Junction Temperature
Value
1.0
40
1.1
11
88
-65 to +150
-65 to +125
Units
A
A
W
mW/°C
°C/W
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
V
RRM
V
RMS
V
R
I
RM
T
A
= 25°C unless otherwise noted
Parameter
12
Maximum Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated V
R
)
Maximum Instantaneous Reverse Current
T
A
= 25°C
(Note 1)
@ rated V
R
T
A
= 100°C
Maximum Instantaneous Forward Voltage @ 1.0 A
20
14
20
13
30
21
30
14
40
28
40
Device
15
50
35
50
16
60
42
60
18
80
56
80
19
90
64
90
100
100
71
100
Units
V
V
V
mA
mA
850
mV
0.2
10
500
700
V
FM
Note:
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
2001
Fairchild Semiconductor Corporation
SS12-S100, Rev. A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
