SS32-S310
SS32 - S310
Features
•
•
•
•
Metal to silicon rectifiers, majority
carrier conduction.
Low forward voltage drop.
Easy pick and place.
High surge current capability.
0.280 (7.112)
0.260 (6.604)
0.124 (3.150)
0.108 (2.743)
2
1
0.245 (6.223)
0.220 (5.588)
0.320 (8.128)
0.305 (7.747)
SMC/DO-214AB
0.103 (2.616)
0.079 (2.007)
0.060 (1.524)
0.030 (0.762)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
3.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
P
D
R
θJA
R
θJC
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Average Rectified Current
@ T
A
= 75°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient**
Thermal Resistance, Junction to Case
Storage Temperature Range
Operating Junction Temperature
Value
3.0
Units
A
100
2.27
18
55
17
-55 to +150
-55 to +150
A
W
mW/°C
°C/W
°C/W
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.55 x 0.55" (14 x 14 mm).
Electrical Characteristics
Parameter
32
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current T
A
= 25°C
@ rated V
R
T
A
= 100°C
Maximum Forward Voltage @ 3.0 A
20
14
20
T
A
= 25°C unless otherwise noted
Device
33
30
21
30
20
500
750
34
40
28
40
35
50
35
50
0.5
10
850
36
60
42
60
38
80
56
80
39
90
63
90
310
100
70
100
Units
V
V
V
mA
mA
mV
1999
Fairchild Semiconductor Corporation
SS32 - S310, Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
