TIP31 Series(TIP31/31A/31B/31C)
TIP31 Series(TIP31/31A/31B/31C)
Medium Power Linear Switching Applications
• Complementary to TIP32/32A/32B/32C
1
TO-220
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: TIP31
: TIP31A
: TIP31B
: TIP31C
1.Base
Value
40
60
80
100
40
60
80
100
5
3
5
1
40
2
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
V
CEO
Collector-Emitter Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
Collector Cut-off Current
: TIP31/31A
: TIP31B/31C
Collector Cut-off Current
: TIP31
: TIP31A
: TIP31B
: TIP31C
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V
CE
= 40V, V
EB
= 0
V
CE
= 60V, V
EB
= 0
V
CE
= 80V, V
EB
= 0
V
CE
= 100V, V
EB
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
I
C
= 3A, I
B
= 375mA
V
CE
= 4V, I
C
= 3A
V
CE
= 10V, I
C
= 500mA
3.0
25
10
200
200
200
200
1
50
1.2
1.8
V
V
MHz
µA
µA
µA
µA
mA
Test Condition
I
C
= 30mA, I
B
= 0
Min.
40
60
80
100
0.3
0.3
Max.
Units
V
V
V
V
mA
mA
I
CEO
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
I
CES
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
