ZTX614
ZTX614
NPN Darlington Transistor
• These device is designed for applications requiring extremely high
gain at collector currents to 0.5A and high breakdown voltage.
• Sourced from process 06.
C
BE
TO-226
Absolute Maximum Ratings*
T
A
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
100
120
10
800
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 100µA, I
E
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 8V, I
C
= 0
I
C
= 100mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 800mA, I
B
= 8mA
I
C
= 800mA, V
BE
= 5V
5000
10000
1.25
1.8
V
V
Min.
100
120
10
0.1
0.1
µA
µA
Typ.
Max.
Units
V
V
Off Characteristics
Collector-Emitter Breakdown Voltage*
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
On Characteristics*
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
1.0%
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
1000
8
50
125
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
