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FMP1617CAX-GXXX 参数 Datasheet PDF下载

FMP1617CAX-GXXX图片预览
型号: FMP1617CAX-GXXX
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位超低功耗和低电压全CMOS RAM [1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM]
分类和应用:
文件页数/大小: 12 页 / 221 K
品牌: FIDELIX [ FIDELIX ]
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FMP1617CAx  
CMOS LPRAM  
WRITE CYCLE (1) (/WE controlled, /ZZ=VIH)  
tWC  
Address  
tCW(2)  
tWR(4)  
/CS  
tAW  
tBW  
/UB, /LB  
/WE  
tWP(1)  
tAS(3)  
High-Z  
tDW  
Data Valid  
tDH  
Data in  
High-Z  
tWHZ  
tOW  
Data Out  
Data Undefined  
WRITE CYCLE (2) (/CS controlled, /ZZ=/WE=VIH)  
tWC  
Address  
tWR(4)  
tAS(3)  
tCW(2)  
/CS  
tAW  
tBW  
/UB, /LB  
/WE  
tWP(1)  
tDW  
Data Valid  
tDH  
Data in  
Data Out  
High-Z  
High-Z  
WRITE CYCLE (3) (/UB, /LB controlled, /ZZ=VIH)  
tWC  
Address  
tWR(4)  
tCW(2)  
tAW  
/CS  
tBW  
/UB, /LB  
tAS(3)  
tWP(1)  
/WE  
tDW  
Data Valid  
tDH  
Data in  
Data Out  
High-Z  
High-Z  
1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with  
asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write  
ends at the earliest transition when /CS goes high and WE goes high. The tWP is measured from the beginning of write to  
the end of write.  
2. tCW is measured from the /CS going low to end of write.  
3. tAS is measured from the address valid to the beginning of write.  
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high.  
5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 20us.  
Revision 0.1  
Jun. 2006  
8