Switching Diode
1N914
Silicon epitaxial planar type
Formosa MS
DO-35
Features
Low power loss, high efficiency
High reliability
High speed ( t
rr
< 4 ns )
1.141(29.0)
1.102(28.0)
.083(2.10)
.051(1.30)
DIA.
.169(4.30)
.146(3.70)
Mechanical data
Case : Glass, DO-35
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.13 gram
.022(.55)
.018(.45)
DIA.
1.141(29.0)
1.102(28.0)
Dimensionsininchesand(millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Non-Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward voltage
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature
V
R
= 0
t
p
= 1 us
CONDITIONS
Symbol
V
RM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
V
T
j
T
STG
-55
MIN.
TYP.
MAX.
100
75
1.0
250
150
75
250
175
+175
UNIT
V
V
A
mA
mA
mA
mW
o
o
C
C
ELECTRICAL CHARACTERISTICS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward voltage
I
F
= 5mA
I
F
= 10mA
V
R
= 20V
Reverse current
V
R
= 20V , T
j
= 150
o
C
V
R
= 75V
Breakdown current
Diode capacitance
Rectification efficiency
I
R
= 100uA , T
P
/T = 0.01 T
P
= 0.3ms
V
R
= 0 , f = 1MHz , V
HF
= 50mV
V
HF
= 2V , f = 100MHz
I
F
= I
R
= 10mA , I
RR
= 1mA
Reverse recovery time
I
F
=10mA, V
R
=6V, I
RR
= 0.1 X I
R
, R
L
=100
OHM
CONDITIONS
Symbol
V
F
V
F
I
R
I
R
I
R
V
(BR)
C
D
n
R
t
rr
t
rr
45
8
4
100
4.0
MIN.
0.62
0.86
TYP.
MAX.
0.72
1.00
25
50
5.0
UNIT
V
V
nA
uA
uA
V
pF
%
ns
ns
FORMOSA [ FORMOSA MS ]
