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MRA4004T3 参数 Datasheet PDF下载

MRA4004T3图片预览
型号: MRA4004T3
PDF下载: 下载PDF文件 查看货源
内容描述: 芯片硅整流 - 玻璃钝化型 [Chip Silicon Rectifier - Glass passivated type]
分类和应用: 二极管光电二极管
文件页数/大小: 2 页 / 73 K
品牌: FORMOSA [ FORMOSA MS ]
 浏览型号MRA4004T3的Datasheet PDF文件第2页  
Formosa MS
MRA4001T3 THRU MRA4007T3
Chip Silicon Rectifier
Glass passivated type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy M
olding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
SMA-L
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting P
osition : Any
Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
See Fig.2
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
CONDITIONS
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
1.0
30
5.0
50
UNIT
A
A
uA
uA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JA
C
J
T
STG
-55
50
15
V
R
= V
RRM
T
A
= 100 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
A1
A2
A3
A4
A5
A6
A7
V
RRM *1
(V)
V
RMS *2
(V)
35
70
140
280
420
560
700
V
R *3
(V)
50
100
200
400
600
800
1000
V
F *4
(V)
Operating
temperature
(
o
C)
MRA4001T3
MRA4002T3
MRA4003T3
MRA4004T3
MRA4005T3
MRA4006T3
MRA4007T3
50
100
200
400
600
800
1000
*1 Repetitive peak reverse voltage
1.1
-55 to +150
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage