TYPICAL CHARACTERISTICS
26
24
G
ps
, POWER GAIN (dB)
22
20
35 V
18
16
14
25 V
V
DD
= 20 V
0
50
100
30 V
I
DQ
= 450 mA
f = 220 MHz
150
200
40 V
45 V
55
T
C
= --30_C
25_C
45
P
out
, OUTPUT POWER (dBm)
50
85_C
50 V
40
35
10
V
DD
= 50 Vdc
I
DQ
= 450 mA
f = 220 MHz
15
20
25
30
35
P
in
, INPUT POWER (dBm)
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
28
27
G
ps
, POWER GAIN (dB)
26
25
24
23
22
21
5
10
P
out
, OUTPUT POWER (WATTS) CW
η
D
V
DD
= 50 Vdc
I
DQ
= 450 mA
f = 220 MHz
100
T
C
= --30_C
25_C
85_C
G
ps
85_C
--30_C
80
70
60
50
40
30
20
10
200
10
5
90
η
D,
DRAIN EFFICIENCY (%)
10
7
10
8
Figure 11. Power Output versus Power Input
25_C
MTTF (HOURS)
10
6
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 50 Vdc, P
out
= 150 W CW, and
η
D
= 68.3%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
Figure 13. MTTF versus Junction Temperature
MRF6V2150NR1 MRF6V2150NBR1
6
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
