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GRM21BR71H105KA12L 参数 Datasheet PDF下载

GRM21BR71H105KA12L图片预览
型号: GRM21BR71H105KA12L
PDF下载: 下载PDF文件 查看货源
内容描述: RF功率LDMOS晶体管 [RF Power LDMOS Transistors]
分类和应用: 晶体电容器晶体管PC
文件页数/大小: 27 页 / 1432 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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Freescale Semiconductor
Technical Data
Document Number: AFT05MS031N
Rev. 0, 6/2012
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
136 to 520 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Typical Performance:
(13.6 Vdc, T
A
= 25°C, CW)
Frequency
(MHz)
380--450
(1,3)
450--520
(2,3)
520
(4)
G
ps
(dB)
18.3
17.7
17.7
η
D
(%)
64.1
62.0
71.4
P1dB
(W)
31
31
33
TO-
-270-
-2
PLASTIC
AFT05MS031NR1
AFT05MS031NR1
AFT05MS031GNR1
136-
-520 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Load Mismatch/Ruggedness
Frequency
(MHz)
520
(4)
Signal
Type
CW
VSWR
>65:1 at all
Phase Angles
P
out
(W)
47
(3 dB Overdrive)
Test
Voltage
17
Result
No Device
Degradation
1. Measured in 380--450 MHz UHF wideband reference circuit.
2. Measured in 450--520 MHz UHF wideband reference circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
4. Measured in 520 MHz narrowband test circuit.
TO-
-270- GULL
-2
PLASTIC
AFT05MS031GNR1
Features
Characterized for Operation from 136 to 520 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band:
136--174 MHz
380--450 MHz
450--520 MHz
225°C Capable Plastic Package
Exceptional Thermal Performance
High Linearity for: TETRA, SSB, LTE
Cost--effective Over--molded Plastic Packaging
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Typical Applications
Output Stage VHF Band Mobile Radio
Output Stage UHF Band Mobile Radio
Gate
Drain
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
©
Freescale Semiconductor, Inc., 2012. All rights reserved.
AFT05MS031NR1 AFT05MS031GNR1
1
RF Device Data
Freescale Semiconductor, Inc.