Peripheral operating requirements and behaviors
6.4.1.2 Flash timing specifications — commands
Table 19. Flash command timing specifications
Symbol Description
Read 1s Block execution time
Min.
Typ.
Max.
Unit
Notes
trd1blk32k
• 32 KB data flash
—
—
—
—
0.5
1.7
ms
ms
• 128 KB program flash
trd1blk128k
trd1sec1k
tpgmchk
trdrsrc
Read 1s Section execution time (flash sector)
Program Check execution time
—
—
—
—
—
—
—
65
60
45
μs
μs
μs
μs
1
1
1
Read Resource execution time
30
tpgm4
Program Longword execution time
145
Erase Flash Block execution time
• 32 KB data flash
2
2
tersblk32k
—
—
55
61
465
495
ms
ms
• 128 KB program flash
tersblk128k
tersscr
Erase Flash Sector execution time
—
14
114
ms
Program Section execution time
• 512 B flash
tpgmsec512
tpgmsec1k
—
—
4.7
9.3
—
—
ms
ms
• 1 KB flash
trd1all
Read 1s All Blocks execution time
Read Once execution time
—
—
—
—
—
—
—
1.8
25
ms
μs
μs
ms
μs
trdonce
1
tpgmonce Program Once execution time
65
115
—
—
tersall
Erase All Blocks execution time
1000
30
2
1
tvfykey
Verify Backdoor Access Key execution time
Program Partition for EEPROM execution time
• 32 KB FlexNVM
tpgmpart32k
—
70
—
ms
Set FlexRAM Function execution time:
• Control Code 0xFF
tsetramff
tsetram8k
tsetram32k
—
—
—
50
0.3
0.7
—
μs
ms
ms
• 8 KB EEPROM backup
• 32 KB EEPROM backup
0.5
1.0
Byte-write to FlexRAM for EEPROM operation
teewr8bers Byte-write to erased FlexRAM location execution
time
—
175
260
μs
3
Byte-write to FlexRAM execution time:
teewr8b8k
teewr8b16k
teewr8b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
340
385
475
1700
1800
2000
μs
μs
μs
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
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