MRF1518T1 参数 Datasheet PDF下载

Freescale Semiconductor

Technical Data

Replaced by MRF1518NT1. There are no form, fit or function changes with this part

replacement. N suffix added to part number to indicate transition to lead - free

terminations.

Document Number: MRF1518

Rev. 7, 5/2006

RF Power Field Effect Transistor

MRF1518T1

N - Channel Enhancement - Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen-

cies to 520 MHz. The high gain and broadband performance of this device

make it ideal for large- signal, common source amplifier applications in 12.5 volt

D

mobile FM equipment.

•

Specified Performance @ 520 MHz, 12.5 Volts

Output Power — 8 Watts

Power Gain — 11 dB

Efficiency — 55%

•

Capable of Handling 20:1 VSWR, @ 15.5 Vdc,

520 MHz, 2 dB Overdrive

•

Excellent Thermal Stability

G

•

Characterized with Series Equivalent Large - Signal

Impedance Parameters

•

Broadband UHF/VHF Demonstration Amplifier

Information Available Upon Request

S

•

Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,

7 Inch Reel.

520 MHz, 8 W, 12.5 V

LATERAL N - CHANNEL

BROADBAND

RF POWER MOSFET

ARCHIVE INFORMATION

CASE 466 - 03, STYLE 1

PLD - 1.5

PLASTIC

Table 1. Maximum Ratings

Rating

Drain- Source Voltage

Gate - Source Voltage

Drain Current — Continuous

Total Device Dissipation @ T

C

= 25°C

(1)

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

Symbol

V

DSS

V

GS

I

D

P

D

T

stg

T

J

Value

- 0.5, +40

±

20

4

62.5

0.50

- 65 to +150

150

Unit

Vdc

Vdc

Adc

W

W/°C

°C

°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

R

θJC

Value

2

Unit

°C/W

Table 3. Moisture Sensitivity Level

Test Methodology

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

1. Calculated based on the formula P

D

=

TJ – TC

R

θJC

Rating

1

Package Peak Temperature

260

Unit

°C

NOTE -

CAUTION

- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

©

Freescale Semiconductor, Inc., 2006. All rights reserved.

MRF1518T1

RF Device Data

Freescale Semiconductor

ARCHIVE INFORMATION