TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−5
−10
−15
−20
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−5
−10
−15
−20
V
DD
= 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two −Tone Measurements,
2.5 MHz Tone Spacing
I
DQ
= 350 mA
1150 mA
950 mA
−45
−50
−55
−60
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
550 mA
750 mA
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
14.8
14.6
G
ps
, POWER GAIN (dB)
14.4
14.2
14
13.8
ACPR
13.6
1900
1920
1940
1960
1980
2000
−53
2020
V
DD
= 28 Vdc, P
out
= 12 W (Avg.), I
DQ
= 750 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
IRL
η
D
G
ps
IM3
24
23
22
−35
−41
−47
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P
out
= 12 Watts Avg.
14.2
14
G
ps
, POWER GAIN (dB)
13.8
13.6
13.4
13.2
13
1900
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
G
ps
IM3
IRL
39
37
35
−25
−31
ACPR
−37
−43
2020
η
D
V
DD
= 28 Vdc, P
out
= 30 W (Avg.), I
DQ
= 750 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1920
1940
1960
1980
2000
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P
out
= 30 Watts Avg.
17
I
DQ
= 1150 mA
950 mA
15
750 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
16
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
−15
−20
−25
−30
−35
−40
14
550 mA
13
350 mA
12
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S19060NR1 MRF5S19060NBR1
6
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
