Freescale Semiconductor
Technical Data
Document Number: MRF6S21140H
Rev. 4, 5/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1200 mA,
P
out
= 30 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 27.5%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S21140HR3
MRF6S21140HSR3
2110 - 2170 MHz, 30 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S21140HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S21140HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 75°C, 30 W CW
Symbol
R
θJC
Value
(2,3)
0.35
0.38
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2004-2007. All rights reserved.
MRF6S21140HR3 MRF6S21140HSR3
1
RF Device Data
Freescale Semiconductor
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