Freescale Semiconductor
Technical Data
Document Number: MRF6S23100H
Rev. 0, 8/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for 802.16 WiBro and dual mode applications with frequencies
from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion
systems.
•
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1000 mA,
P
out
= 20 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.4 dB
Drain Efficiency — 23.5%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40.5 dBc @ 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW
Output Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
Low Gold Plating Thickness on Leads, 40
µ
″
Nominal.
•
Pb - Free and RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S23100HR3
MRF6S23100HSR3
2300 - 2400 MHz, 20 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S23100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S23100HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
- 0.5, +68
- 0.5, +12
330
1.9
- 65 to +150
200
100
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 20 W CW
Symbol
R
θJC
Value
(1,2)
0.53
0.59
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6S23100HR3 MRF6S23100HSR3
1
RF Device Data
Freescale Semiconductor
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