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MRF6VP41KHR7 参数 Datasheet PDF下载

MRF6VP41KHR7图片预览
型号: MRF6VP41KHR7
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场效应晶体管N - 沟道增强 - 模式横向的MOSFET [RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs]
分类和应用: 晶体晶体管功率场效应晶体管射频
文件页数/大小: 19 页 / 1294 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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Freescale Semiconductor
Technical Data
Document Number: MRF6VP41KH
Rev. 6, 4/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for pulse and CW wideband applications with frequencies up to
500 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
Typical Pulse Performance at 450 MHz: V
DD
= 50 Volts, I
DQ
= 150 mA,
P
out
= 1000 Watts Peak (200 W Avg.), Pulse Width = 100
μsec,
Duty Cycle = 20%
Power Gain — 20 dB
Drain Efficiency — 64%
Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
MRF6VP41KHR6
MRF6VP41KHSR6
10-
-500 MHz, 1000 W, 50 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D-
-05, STYLE 1
NI-
-1230
MRF6VP41KHR6
CASE 375E-
-04, STYLE 1
NI-
-1230S
MRF6VP41KHSR6
PARTS ARE PUSH-
-PULL
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Total Device Dissipation @ T
C
= 25°C, CW only
(3)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
D
Value
--0.5, +110
--6, +10
-- 65 to +150
150
225
1333
Unit
Vdc
Vdc
°C
°C
°C
W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to Fig. 12, Transient Thermal Impedance, for information to calculate value for pulsed operation.
©
Freescale Semiconductor, Inc., 2008--2010, 2012. All rights reserved.
MRF6VP41KHR6 MRF6VP41KHSR6
1
RF Device Data
Freescale Semiconductor, Inc.