Freescale Semiconductor
Technical Data
Document Number: MRF8P9300H
Rev. 1.1, 7/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
2400 mA, P
out
= 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
19.6
19.6
19.4
η
D
(%)
35.4
35.6
35.8
Output PAR
(dB)
6.0
6.0
5.9
ACPR
(dBc)
--37.3
--37.1
--36.7
MRF8P9300HR6
MRF8P9300HSR6
920-
-960 MHz, 100 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
•
Typical P
out
@ 1 dB Compression Point
≃
326 Watts CW
880 MHz
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
2400 mA, P
out
= 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
865 MHz
880 MHz
895 MHz
G
ps
(dB)
20.5
20.7
20.6
η
D
(%)
35.2
36.0
37.0
Output PAR
(dB)
6.0
6.0
6.0
ACPR
(dBc)
--36.1
--36.1
--35.8
CASE 375D-
-05, STYLE 1
NI-
-1230
MRF8P9300HR6
CASE 375E-
-04, STYLE 1
NI-
-1230S
MRF8P9300HSR6
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
MRF8P9300HR6 MRF8P9300HSR6
1
RF Device Data
Freescale Semiconductor
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