Freescale Semiconductor
Technical Data
Document Number: MRF8S18260H
Rev. 1, 2/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier base station applications with
frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 30 Volts, I
DQ
=
1600 mA, P
out
= 74 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
1805 MHz
1840 MHz
1880 MHz
G
ps
(dB)
17.9
17.9
17.9
η
D
(%)
31.6
31.9
32.5
Output PAR
(dB)
6.0
6.0
5.9
ACPR
(dBc)
--35.0
--36.0
--36.0
MRF8S18260HR6
MRF8S18260HSR6
1805-
-1880 MHz, 74 W AVG., 30 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 374 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
≃
260 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
420
3.5
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
CASE 375I-
-04
NI-
-1230-
-8
MRF8S18260HR6
CASE 375J-
-03
NI-
-1230S-
-8
MRF8S18260HSR6
N.C. 1
RF
in
/V
GS
2
RF
in
/V
GS
3
N.C. 4
(Top View)
8 VBW
7 RF
out
/V
DS
6 RF
out
/V
DS
5 VBW
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 74 W CW, 30 Vdc, I
DQ
= 1600 mA, 1805 MHz
Case Temperature 88°C, 260 W CW
(4)
, 30 Vdc, I
DQ
= 1600 mA, 1805 MHz
Symbol
R
θJC
Value
(2,3)
0.27
0.26
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
©
Freescale Semiconductor, Inc., 2010, 2012. All rights reserved.
MRF8S18260HR6 MRF8S18260HSR6
1
RF Device Data
Freescale Semiconductor, Inc.
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
