TYPICAL CHARACTERISTICS — 1.8-
-30 MHz
BROADBAND REFERENCE CIRCUIT
28
27
G
ps
, POWER GAIN (dB)
26
25
24
23
22
21
20
0
5
10
15
20
25
30
f, FREQUENCY (MHz)
P
out
G
ps
η
D
V
DD
= 50 Vdc, P
in
= 0.1 W
I
DQ
= 25 mA
75
72
69
66
63
P
out
, OUTPUT
POWER (WATTS)
f = 10 MHz
P
out
, OUTPUT POWER (dBm)
f = 10 MHz
44
42
30 MHz
40
38
36
12
V
DD
= 50 Vdc
I
DQ
= 25 mA
1.8 MHz
28
26
24
22
η
D
, DRAIN
EFFICIENCY (%)
Figure 13. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
35
30
25
20
15
10
30 MHz
5
0
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
, GATE--SOURCE VOLTAGE (VOLTS)
V
DD
= 50 Vdc
P
in
= 0.1 W
1.8 MHz
46
P
out
, OUTPUT POWER (WATTS)
14
16
18
20
22
P
in
, INPUT POWER (dBm)
P1dB
(W)
23
25
25
24
P3dB
(W)
28
30
30
26
28
Figure 14. CW Output Power versus Gate-
-Source
Voltage at a Constant Input Power
f
(MHz)
1.8
10
30
Figure 15. CW Output Power versus Input Power
26
25
G
ps
, POWER GAIN (dB)
24
23
22
21
20
19
18
5
V
DD
= 50 Vdc
I
DQ
= 25 mA
10
15
20
25
30
1.8 MHz
10 MHz
30 MHz
G
ps
1.8 MHz
10 MHz
30 MHz
η
D
90
80
70
60
50
40
30
20
10
35
P
out
, OUTPUT POWER (WATTS)
η
D,
DRAIN EFFICIENCY (%)
Figure 16. Power Gain and Drain Efficiency versus CW Output Power
MRFE6VS25NR1
12
RF Device Data
Freescale Semiconductor, Inc.
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
