TYPICAL CHARACTERISTICS — 512 MHz
35
P
out
, OUTPUT POWER (WATTS)
30
25
20
15
10
5
0
0
1
2
3
4
V
GS
, GATE--SOURCE VOLTAGE (VOLTS)
V
DD
= 50 Vdc
P
in
= 0.07 W
f = 512 MHz
50
45
P
out
, OUTPUT POWER (dBm)
40
35
30
25
20
15
V
DD
= 50 Vdc
I
DQ
= 10 mA
f = 512 MHz
0
5
10
15
20
25
P
in
, INPUT POWER (dBm)
f
(MHz)
512
P1dB
(W)
27.8
P3dB
(W)
31.4
Figure 7. CW Output Power versus Gate-
-Source
Voltage at a Constant Input Power
Figure 8. CW Output Power versus Input Power
27
26
G
ps
, POWER GAIN (dB)
25
24
23
22
21
20
19
0.3
1
10
P
out
, OUTPUT POWER (WATTS)
T
C
= --30_C
25_C
85_C
η
D
V
DD
= 50 Vdc
I
DQ
= 10 mA
f = 512 MHz
G
ps
85_C
--30_C
90
80
25_C
70
60
50
40
30
20
10
50
Figure 9. Power Gain and Drain Efficiency
versus CW Output Power
η
D,
DRAIN EFFICIENCY (%)
MRFE6VS25NR1
RF Device Data
Freescale Semiconductor, Inc.
7
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
