Freescale Semiconductor
Technical Data
Document Number: MMA25312B
Rev. 0, 9/2012
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMA25312B is a high efficiency InGaP HBT amplifier designed for
use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and
wireless broadband mesh networks. It is suitable for applications with
frequencies from 2300 to 2700 MHz using simple external matching
components with a 3 to 5 volt supply.
Features
•
Frequency: 2300--2700 MHz
•
P1dB: 31 dBm @ 2500 MHz
•
Power Gain: 26 dB @ 2500 MHz
•
OIP3: 40 dBm @ 2500 MHz
•
Active Bias Control (On--chip)
•
Single 3 to 5 Volt Supply
•
Single--ended Power Detector
•
Cost--effective QFN Surface Mount Package
•
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.
Table 1. Typical CW Performance
(1)
Characteristic
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @
1dB Compression
Symbol
G
p
IRL
ORL
P1dB
2300
MHz
26
--14
--11
30
2500
MHz
26
--12
--13
31
2700
MHz
24.5
--12
--15
29.8
Unit
dB
dB
dB
dBm
MMA25312BT1
2300-
-2700 MHz, 26 dB
31 dBm
InGaP HBT
CASE 2131-
-01
QFN 3×3
PLASTIC
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
(2)
Symbol
V
CC
I
CC
P
in
T
stg
T
J
Value
6
550
30
--65 to +150
150
Unit
V
mA
dBm
°C
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. V
CC1
= V
CC2
= V
BIAS
= 5 Vdc, T
A
= 25°C, 50 ohm system, CW
Application Circuit
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 91°C, V
CC1
= V
CC2
= V
BIAS
= 5 Vdc
Symbol
R
θJC
Value
(3)
92
Unit
°C/W
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2012. All rights reserved.
MMA25312BT1
1
RF Device Data
Freescale Semiconductor, Inc.