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1MBI50U4F-120L-50 参数 Datasheet PDF下载

1MBI50U4F-120L-50图片预览
型号: 1MBI50U4F-120L-50
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块( U系列) 1200V / 50A / 1在一个封装 [IGBT MODULE (U series) 1200V / 50A / 1 in one package]
分类和应用: 双极性晶体管
文件页数/大小: 7 页 / 452 K
品牌: FUJI [ FUJI ELECTRIC ]
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http://www.fujielectric.com/products/semiconductor/
1MBI50U4F-120L-50
IGBT MODULE (U series)
1200V / 50A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
Ic
Collector current
Ic pulse
Conditions
Maximum ratings
1200
±20
75
50
150
100
25
50
275
1200
75
150
+150
-40~+125
2500
3.5
Units
V
V
Continuous
1ms
1ms
1 device
Continuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
A
-Ic
-Ic pulse
Collector power dissipation
Pc
Reverse voltage for FWD
VR
IF
Forword current for FWD
IF pulse
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1)
V
iso
Mounting (*2)
Screw torque
-
Terminals (*3)
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5)
W
V
A
°C
°C
VAC
Nm
AC : 1min.
1