2SK3688-01L,S,SJ
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings
600
600
Continuous drain current
±16
Pulsed drain current
±64
Gate-source voltage
±30
Repetitive or non-repetitive
16
Maximum avalanche energy
242.7
Maximum drain-source dV/dt
20
Peak diode recovery dV/dt
5
1.67
Max. power dissipation
270
Operating and storage
T
ch
+150
temperature range
T
stg
-55 to +150
Isolation voltage
V
ISO
2
*1 L=1.74mH, Vcc=60V, See to Avalanche Energy Graph
*2 I
F
< -I
D
, -di/dt=50A/μs, Vcc < BV
DSS
, Tch < 150°C
=
=
=
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source voltage
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
dV
DS
/dt
dV/dt
P
D
Unit
V
V
A
A
V
A
mJ
kV/μs
kV/μs
W
Remarks
V
GS
=-30V
Equivalent circuit schematic
Tch <150°C
=
*1
VDS < 600V
=
*2
Ta=25°C
Tc=25°C
Gate(G)
Source(S)
Drain(D)
°C
°C
kVrms t=60sec, f=60Hz
Electrical characteristics (T
c
=25°C unless otherwise specified)
Test Conditions
I
D
= 250
μ
A
V
GS
=0V
I
D
= 250
μ
A
V
DS
=V
GS
V
DS
=600V V
GS
=0V
T
ch
=25°C
T
ch
=125°C
V
DS
=480V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=8A V
GS
=10V
I
D
=8A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=8A
V
GS
=10V
R
GS
=10
Ω
V
CC
=300V
I
D
=16A
V
GS
=10V
L=1.74mH T
ch
=25°C
I
F
=16A V
GS
=0V T
ch
=25°C
I
F
=16A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
600
3.0
V
V
μA
nA
Ω
S
pF
10
0.42
6.5
13
1590
2390
200
300
11
17
29
43.5
16
24
58
87
8
12
34
51
12
18
10
15
16
1.00
1.50
0.68
7.8
5.0
25
250
100
0.57
ns
nC
A
V
μs
μC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.463
75.0
Units
°C/W
°C/W
http://www.fujielectric.co.jp/fdt/scd/
1
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