2SK3873-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
200407
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breakdown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
Ratings
280
280
56
±224
±30
56
1039.1
41
20
5
410
2.50
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
mJ
Remarks
V
GS
=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note *1
Note *2
Note *3
Source(S)
Note *1:Tch
<
150°C,Repetitive and Non-repetitive
=
Note *2:StartingTch=25°C,I
AS
=23A,L=3.37mH,
V
CC
=48V,R
G
=50Ω
E
AS
limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:I
F
< -I
D
, -di/dt=50A/µs,V
CC
< BV
DSS
, Tch< 150°C
=
=
=
kV/µs V
DS
<280V
=
kV/µs Note *4
Tc=25°C
W
Ta=25°C
°C
°C
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=280V V
GS
=0V
V
DS
=224V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=28A V
GS
=10V
I
D
=28A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=180V I
D
=28A
V
GS
=10V
R
GS
=10
Ω
V
CC
=140V
I
D
=56A
V
GS
=10V
I
F
=56A V
GS
=0V T
ch
=25°C
I
F
=56A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Test Conditions
channel to case
channel to ambient
Min.
280
3.0
T
ch
=25°C
T
ch
=125°C
Typ.
Max.
5.0
25
250
100
61
Units
V
V
µA
nA
mΩ
S
pF
12
51
24
3600
5400
530
795
35
52.5
40
60
58
87
80
120
10
15
80
120
30
45
25
38
1.20
1.50
400
4.5
ns
nC
V
ns
µC
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
0.305
50.0
Units
°C/W
°C/W
1
FUJI [ FUJI ELECTRIC ]
