6MBI100S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V,V
GE=
±15V, Rg=12Ω,Tj=25 C
1000
1000
o
Vcc=600V,V
GE=
±15V, Rg=12Ω,Tj=125
o
C
toff
500
toff
ton
tr
500
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
ton
tr
tf
100
100
tf
50
0
50
100
Collector current : Ic [ A ]
150
200
50
0
50
100
Collector current : Ic [ A ]
150
200
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V,Ic=100A,V
GE=
±15V,Tj=25
o
C
5000
ton
toff
Switching time : ton, tr, toff, tf [ nsec ]
tr
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
20
25
Vcc=600V,V
GE=
±15V, Rg=12Ω,Tj=125
o
C
Eon(125 C)
o
1000
Eon(25 C)
15
o
500
Eoff(125 C)
10
Eoff(25 C)
Err(125 C)
5
Err(25 C)
o
o
o
o
100
50
10
50
Gate resistance : Rg [
Ω
]
100
200
0
0
50
100
Collector current : Ic [ A ]
150
200
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area
250
Vcc=600V,Ic=100A,V
GE=
±15V ,Tj=125 C
80
o
+V
GE
=15V,-V
GE<
15V, Rg>12Ω,Tj<125
o
C
=
=
=
Eon
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
60
Collector current : Ic [ A ]
Eoff
Err
0
10
50
Gate resistance : Rg [
Ω
]
100
300
200
150
40
100
20
50
0
0
200
400
600
800
1000
1200
1400
Collector - Emitter voltage : VCE [ V ]
FUJI [ FUJI ELECTRIC ]
