6MBP25RA120
IGBT-IPM
Tra n s ie n t th e rm a l re sista n c e
10
Reversed biased safe operating area
Vcc=15V,Tj
<
125°C
=
350
T h erm a l re s ista n ce : R th (j-c ) (°C /W )
300
Collector current : Ic (A)
FW D
1
IG B T
250
200
SCSOA
(non-repetitive pulse)
150
0.1
100
50
RBSOA
(Repetitive pulse)
0 .0 1
0.00 1
0
0 .0 1
0.1
1
0
200
400
600
800
1000
1200
1400
P u ls e w idth :P w (s e c )
Collector-Emitter voltage : Vce (V)
P ow er d era tin g fo r IG B T
(p er device)
2 50
C ollecter P ow er D is s ipa tion : P c (W )
C o lle cte r P o w er D iss ip ation : P c (W )
10 0
P ow er dera ting for F W D
(pe r d evice)
2 00
80
1 50
60
1 00
40
50
20
0
0
20
40
60
80
1 00
1 20
1 40
1 60
C a se Tem peratu re : T c (°C )
S witchin g Lo s s vs. C olle c to r C u rrent
E dc =600 V ,V cc= 15V ,Tj= 25 °C
12
0
0
20
40
60
80
10 0
12 0
14 0
16 0
C a se T e m p era ture : T c (°C )
S w itch in g L o s s vs . C o lle c to r C u rre nt
E dc =6 0 0 V ,V cc =1 5 V ,Tj= 1 2 5 °C
12
S w itc h in g lo s s : E o n, E o ff,E rr (m J/c y c le)
S w itch in g lo s s : E o n,Eo ff,E rr (m J/cy c le)
10
10
Eo n
8
Eo n
6
8
6
Eo ff
4
4
Eo ff
2
E rr
0
0
5
10
15
20
25
30
35
40
2
E rr
0
0
5
10
15
20
25
30
35
40
C o lle ct or c u rre nt : Ic (A )
C o lle ctor cu rre nt : Ic (A )
FUJI [ FUJI ELECTRIC ]
