YG861S12R
Major characteristics
(5A)
10
±0.5
(120V / 5A )
[0401]
High Voltage Schottky barrier diode
Outline drawings, mm
ø3.2
+0.2
-0.1
4.5
±0.2
2.7
±0.2
6.3
3.7
±0.2
Characteristics
YG861S12R
Units Condition
V
RRM
120
V
V
F
0.88
V
Tc=25°C
Tc=25°C MAX.
I
O
5
A
2.7
±0.2
1
2
1.2
±0.2
13
Min
0.7
±0.2
15
±0.3
0.6
±0.2
2.7
±0.2
Features
Low V
F
High Voltage
Center tap connection
Applications
High frequency operation
DC-DC converters
AC adapter
5.08
±0.4
Package : TO-220F
Epoxy resin UL : V-0
Connection diagram
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C Unless otherwise specified )
Item
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Isolating voltage
Average output current
Non-repetitive surge current
Operating junction temperature
Storage temperature
Symbol
V
RSM
V
RRM
V
iso
I
o
I
FSM
T
j
T
stg
Terminals-to-Case,
AC.1min
Square wave, duty=
1/2
Tc=104°C
Sine wave
10ms 1shot
Conditions
tw=500ns, duty=1/40
1
2
Rating
120
120
1500
5
75
+150
-40 to +150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics (at Tc=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
V
F
I
R
Rth(j-c)
Conditions
I
FM
=10A
V
R
=V
RRM
Junction to case
Max.
0.88
150
5.0
Unit
V
µA
°C/W
Mechanical characteristics
Mounting torque
Approximate mass
Recommended torque
0.3 to 0.5
2
N·m
g
FUJI [ FUJI ELECTRIC ]
