TCS450
450 Watts, 45 Volts, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The TCS450 s a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz, with the
pulse width and duty required for TCAS applications. The device has gold
thin-film metallization and diffused ballasting for proven highest MTTF. The
transistor includes input prematch for broadband capaility. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
55KT Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
2
Maximum Voltage and Current
BVces
Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
1166 Watts
55 Volts
3.5 Volts
40 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
η
c
Pd
VSWR
BVebo
1
BVces
Cob
h
FE1
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Pulse Droop
Load Mismatch Tolerance
Emitter to Base Breakdown
Collector to Emitter Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
TEST CONDITIONS
F = 1030 MHz
Vcc = 45 Volts
PW = 32
µsec
DF = 1%
F = 1030MHz
MIN
450
100
6.2
45
0.25
6:1
Ie = 30 mA
Ic = 30 mA
Vcb = 50 Volts
Ic = 500 mA, Vce = 5 V
3.5
55
10
0.15
o
TYP
MAX
UNITS
Watts
Watts
dB
%
dB
Volts
Volts
pF
C/W
θjc
2
Note 1: Not measureable due to internal DC Return.
2: At rated pulse conditions
Revision 2, July 7, 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
GHZTECH [ GHZ TECHNOLOGY ]
