BL
FEATURES
GALAXY ELECTRICAL
1N6263
VOLTAGE RANGE: 60 V
POWER DISSIPATION:400
mW
SMALL SIGNAL SCHOTTKY DIODE
For general purpose applications
Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
DO - 35(GLASS)
MECHANICAL DATA
Case:JEDEC DO--35,glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Peak reverse voltage
Pow er dissipation (Infinite Heat Sink)
Maximum single cycle surge 10
µ
s square w ave
Junction tenperature
Storage temperature range
1)Valid
provided that electrodes are kept at ambient temperature.
Value
60.0
400
1)
2.0
125
c-55
---+ 150
UNITS
V
mW
A
V
RRM
P
tot
I
FSM
T
J
T
STG
ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherw ise specified)
Symbols
Reverse breakdow n voltage
Leakage current
@ V
R
=50V
I
F
=1mA
I
F
=15mA
Junction capacitance
@ V
R
=0V,f=1MHz
@ I
R
=10 A
Min.
60.0
Typ.
Max.
UNITS
V
V
R
I
R
V
F
V
F
C
J
t
rr
R
θ
JA
200.0
0.41
1.0
2.2
1
0.3
nA
V
V
pF
Forw ard voltage drop @
Reverse recovery time @ I
F
=I
R
=5mA,recover to 0.1 I
R
Termal resistance junction to ambient air
ns
/mW
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Document Number 0265002
BL
GALAXY ELECTRICAL
1.
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