Gunter Semiconductor GmbH
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 175℃ Operating Temperature
℃
* Fast Switching
* Fully Avalanche Rated
* Extremely low Rds(on)
Mechanical Data:
D19
4.32mm x 4.57mm
Dimension
400
µ
m
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
20 mil Al
Source Bonding Wire:
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
@Ta=25℃
℃
GFC044
N Channel Power MOSFET with extremely low RDS(on)
Symbol
V(BR)DSS
RDS(ON)
Limit
Unit
Test Conditions
V
GS
=0V, I
D
=250µΑ
V
GS
=10V, I
D
=25Α
VGS=10V
VGS=10V
60
0.028
41
29
-55~175
-55~175
V
Ω
A
A
℃
℃
Continuous Drain current ( in target package)
ID@25℃
Continuous Drain current ( in target package)
ID@100℃
Operation Junction
Storage Temperature
Tj
T
STR
Target Device: IRFZ44
TO-263AB
Pd
Pd
2
83
W
W
@Ta=25℃
@Tc=25℃
GSG [ GUNTER SENICONDUCTOR GMBH. ]
