Gunter Semiconductor GmbH
P Channel Power MOSFET
GFC9034
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 175℃ Operating Temperature
℃
* Fast Switching
* Fully Avalanche Rated
Mechanical Data:
D38
Dimension
3.64mm x 3.86mm
Thickness:
400
µ
m
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire:
12 mil Al
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction Temperatre
Storage Temperature
@Ta=25℃
℃
Symbol
-V(BR)DSS
RDS(ON)
--
ID@25
℃
-
-
ID@100
℃
Tj
Limit
Unit
Test Conditions
−
VGS=0V, -ID=250
µΑ
−
VGS=10V, - ID=11
Α
- VGS=10V
- VGS=10V
60
0.14
18
13
-55~175
-55~175
V
Ω
A
A
℃
℃
T
STR
Target Device: IRF9Z34
TO-220AB
P
D
88
W
@Tc=25℃