Gunter Semiconductor GmbH
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 175℃ Operating Temperature
℃
* Fast Switching
* Fully Avalanche Rated
* High breakdown voltage
Mechanical Data:
D23
Dimension
5.64mm x 5.64mm
480
µ
m
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire:
10 mil Al
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
@Ta=25℃
℃
GFCE40
N Channel Power MOSFET , with high breakdown voltage
Symbol
V(BR)DSS
RDS(ON)
ID@25℃
ID@100℃
Tj
TSTR
Limit
Unit
Test Conditions
VGS=0V, ID=250µΑ
VGS=10V, ID=3.2Α
VGS=10V
VGS=10V
800
2
5.4
3.4
-55~175
-55~175
V
Ω
A
A
℃
℃
Target Device: IRFPE40
TO-247AC
P
D
150
W
@Tc=25℃
GSG [ GUNTER SENICONDUCTOR GMBH. ]
