BYV96DGP THRU BYV96EGP
SINTERED GLASS JUNCTION
FAST SWITCHING PLASTIC RECTIFIER
VOLTAGE:800 TO 1000V
CURRENT: 1.5A
FEATURE
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C/10sec/0.375”lead length at 5 lbs tension
Operate at Ta
=55°C
with no thermal run away
Typical Ir<0.1µA
DO-15\DO-204AC
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
BYV96DGP
800
560
800
BYV96EGP
1000
700
1000
units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Vrrm
Vrms
Vdc
V
V
V
V
A
A
V
reverse avalanche breakdown voltage
at I
R
= 0.1 mA
Maximum Average Forward Rectified
Current 3/8”lead length at Ta =65
°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at rated Forward
Current and 25
°C
I
F
=3A
non-repetitive peak reverse avalanche energy
(Note 1)
Maximum DC Reverse Current
Ta =25
°C
at rated DC blocking voltage
Ta =150
°C
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance
(Note 3)
Typical Thermal Resistance
(Note 4)
Storage and Operating Junction Temperature
V
(BR)R
(min)
If(av)
Ifsm
Vf
900
1.5
35.0
1.60
1100
Ersm
Ir
Trr
Cj
R(ja)
Tstg, Tj
10
5.0
150
300
45.0
46.0
-65 to +175
mJ
µ
A
µ
A
nS
pF
°C
/W
°C
Note: 1. L = 120 mH; Tj = Tj max prior to surge; inductive load switched off
2.Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A1
www.gulfsemi.com
GULFSEMI [ GULF SEMICONDUCTOR ]
