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ES2A 参数 Datasheet PDF下载

ES2A图片预览
型号: ES2A
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装高效率快恢复整流二极管 [Surface Mount Efficient Fast Recovery Rectifier]
分类和应用: 整流二极管光电二极管功效
文件页数/大小: 2 页 / 1200 K
品牌: GXELECTRONICS [ Gaomi Xinghe Electronics Co., Ltd. ]
 浏览型号ES2A的Datasheet PDF文件第2页  
星合电子
XINGHE ELECTRONICS
Surface Mount Efficient Fast Recovery Rectifier
Voltage Range 50 to 600 V
Current 2.0 Ampere
ES2A THRU ES2J
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Glass passivated chip
Mechanical Data
Case: Molded plastic SMB/DO-214AA
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-750
method 2026
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 0.093 gram
SMB/DO-214AA
.075(1.91)
.083(2.11)
.130(3.30)
.155(3.94)
.160(4.06)
.185(4.70)
.006(.152)
.012(.305)
.083(2.13)
.096(2.44)
.002(.051)
.008(.203)
.200(5.08)
.220(5.59)
.030(0.76)
.060(1.52)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTIC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
A
=90
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 2.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Maximum Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
SYMBOL
V
RRM
V
RMS
V
DC
IF
(AV)
ES2A
50
35
50
ES2B
100
70
100
ES2D
200
140
200
2.0
ES2G
400
280
400
ES2J
600
420
600
UNIT
V
V
V
A
I
FSM
60
A
V
F
I
R
Trr
C
J
R
JA
T
J
, T
STG
0.9
5.0
100
20
50
55
-55 to + 150
1.25
1.5
V
uA
uA
nS
pF
o
25
50
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to ambient.
1
GAOMI XINGHE ELECTRONICSCO.,LTD.    WWW.SDDZG.COM     TEL:0536-2210359       QQ:464768017