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IRF510 参数 Datasheet PDF下载

IRF510图片预览
型号: IRF510
PDF下载: 下载PDF文件 查看货源
内容描述: 4.9A , 5.6A和, 80V和100V , 0.54和0.74 Ohm的N通道功率MOSFET [4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 7 页 / 71 K
品牌: HARRIS [ HARRIS CORPORATION ]
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IRF510, IRF511, IRF512, IRF513
Typical Performance Curves
Unless Otherwise Specified
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
10
I
D,
DRAIN CURRENT (A)
8
6
IRF510, IRF511
4
IRF512, IRF513
2
0
125
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
175
25
50
75
100
125
150
175
T
C,
CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
THERMAL IMPEDANCE (
o
C/W)
Z
θ
JC
, TRANSIENT
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
0.01
10
-5
10
-4
10
-3
10
-2
0.1
1
10
t
1
t
2
t
1
, RECTANGULAR PULSE DURATION (S)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
I
D
, DRAIN CURRENT (A)
10µs
100µs
10 IRF512, 3
IRF510, 1
IRF512.3
I
D
, DRAIN CURRENT (A)
IRF510, 1
OPERATION IN THIS
REGION IS LIMITED
BY r
DS(ON)
10
V
GS
= 10V
80µs PULSE TEST
8
V
GS
= 8V
6
V
GS
= 7V
4
V
GS
= 6V
2
V
GS
= 5V
10
3
0
V
GS
= 4V
0
10
20
30
40
50
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
1ms
1
T
C
= 25
o
C
T
J
= 175
o
C
SINGLE PULSE
0.1
1
DC
IRF511, 3
IRF510, 2
10
10
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
5-4