欢迎访问ic37.com |
会员登录 免费注册
发布采购

RFD3055SM 参数 Datasheet PDF下载

RFD3055SM图片预览
型号: RFD3055SM
PDF下载: 下载PDF文件 查看货源
内容描述: 12A , 60V ,额定雪崩, N沟道增强型功率MOSFET ( MegaFETs ) [12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)]
分类和应用: 晶体晶体管开关
文件页数/大小: 8 页 / 118 K
品牌: HARRIS [ HARRIS CORPORATION ]
 浏览型号RFD3055SM的Datasheet PDF文件第2页浏览型号RFD3055SM的Datasheet PDF文件第3页浏览型号RFD3055SM的Datasheet PDF文件第4页浏览型号RFD3055SM的Datasheet PDF文件第5页浏览型号RFD3055SM的Datasheet PDF文件第6页浏览型号RFD3055SM的Datasheet PDF文件第7页浏览型号RFD3055SM的Datasheet PDF文件第8页  
S E M I C O N D U C T O R
RFD3055, RFD3055SM
RFP3055
12A, 60V, Avalanche Rated, N-Channel
Enhancement-Mode Power MOSFETs (MegaFETs)
Packaging
JEDEC TO-220AB
TOP VIEW
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
February 1994
Features
• 12A, 60V
• r
DS(ON)
= 0.150Ω
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175
o
C Operating Temperature
Description
DRAIN
(FLANGE)
JEDEC TO-251AA
TOP VIEW
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
The RFD3055, RFD3055SM and RFP3055 N-Channel
power MOSFETs are manufactured using the MegaFET pro-
cess. This process, which uses feature sizes approaching
those of LSI integrated circuits gives optimum utilization of
silicon, resulting in outstanding performance. They were
designed for use in applications such as switching regula-
tors, switching converters, motor drivers, relay drivers and
emitter switches for bipolar transistors. These transistors
can be operated directly from integrated circuits.
The RFD3055 is supplied in the JEDEC TO-251AA plastic
package, the RFD3055SM is supplied in the JEDEC
TO-252AA plastic package and the RFP3055 is supplied in the
JEDEC TO-220AB plastic package. Due to space limitations
the RFD3055 and RFD3055SM are branded FD3055.
When ordering
RFD3055SM.
use
the
entire
part
number;
eg.
JEDEC TO-252AA
TOP VIEW
SOURCE
DRAIN
GATE
Symbol
D
Developmental type TA49082.
G
S
Absolute Maximum Ratings
(T
C
= +25
o
C), Unless Otherwise Specified
RFD3055, RFD3055SM, RFP3055
60
60
±20
12
Refer to Peak Current Curve
Refer to UIS Curve
30
53
0.357
-55 to +175
UNITS
V
V
V
A
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
AM
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
A
W
W/
o
C
o
C
Copyright
©
Harris Corporation 1994
1
File Number
3648