GD50PIL120C6S
IGBT Module
IGBT Module
Symbol
V
ISO
L
CE
R
CC’+EE’
Stray Inductance
Module Lead Resistance,Terminal to Chip
@ T
C
=25℃
Junction-to-Case (per IGBT-inverter)
Junction-to-Case (per DIODE-inverter)
Junction-to-Case (per DIODE-rectifier)
Junction-to-Case (per IGBT-brake-chopper)
Junction-to-Case (per DIODE-brake-chopper)
Case-to-Sink (Conductive grease applied)
Maximum Junction Temperature
Storage Temperature Range
Mounting Screw:M5
Weight of Module
-40
3.0
300
0.009
150
125
6.0
Parameter
Isolation Voltage RMS,f=50Hz,t=1min
Min.
Typ.
2500
60
4.00
0.31
0.59
0.62
0.55
0.70
Max.
Units
V
nH
mΩ
R
θJC
K/W
R
θCS
T
j
T
STG
Mounting
Torque
G
K/W
℃
℃
N.m
g
7/12
Preliminary
HB [ HB ELECTRONIC COMPONENTS ]
