2SB740
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
–70
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
–50
V
–6
V
–1
A
Collector power dissipation
Junction temperature
Storage temperature
PC
0.9
W
°C
°C
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–70
–50
–6
—
—
V
IC = –10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
V
IC = –1 mA, RBE = ∞
IE = –10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
ICBO
—
—
—
—
—
–1
µA
µA
VCB = –55 V, IE = 0
VEB = –6 V, IC = 0
IEBO
hFE*1
—
–0.2
320
–0.6
100
—
VCE = –2 V, IC = –0.1 A
IC = –1 A, IB = –0.1 A
Collector to emitter saturation
voltage
VCE(sat)
V
Gain bandwidth product
fT
—
—
150
35
—
—
MHz
pF
VCE = –2 V, IC = –10 mA
Collector output capacitance
Cob
VCB = –10 V, IE = 0,
f = 1 MHz
Note: 1. The 2SB740 is grouped by hFE as follows.
B
C
100 to 200
160 to 320
2
HITACHI [ HITACHI SEMICONDUCTOR ]
