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R1LV0408CSB-5SI 参数 Datasheet PDF下载

R1LV0408CSB-5SI图片预览
型号: R1LV0408CSB-5SI
PDF下载: 下载PDF文件 查看货源
内容描述: 宽温度范围版本4M SRAM ( 512千字× 8位) [Wide Temperature Range Version 4M SRAM (512-kword 】 8-bit)]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 94 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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R1LV0408C-I Series
AC Characteristics
(Ta =
−40
to +85°C, V
CC
= 2.7 V to 3.6 V, unless otherwise noted.)
Test Conditions
Input pulse levels: V
IL
= 0.4 V, V
IH
= 2.4 V
Input rise and fall time: 5 ns
Input and output timing reference levels: 1.5 V
Output load: 1 TTL Gate + C
L
(50 pF) (R1LV0408C-5SI)
1 TTL Gate + C
L
(100 pF) (R1LV0408C-7LI)
(Including scope and jig)
Read Cycle
R1LV0408C-I
-5SI
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Chip select to output in low-Z
Output enable to output in low-Z
Chip deselect to output in high-Z
Output disable to output in high-Z
Output hold from address change
Symbol
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
Min
55
10
5
0
0
10
Max
55
55
30
20
20
-7LI
Min
70
10
5
0
0
10
Max
70
70
35
25
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
2
1, 2
1, 2
Notes
Rev.2.00, May.25.2004, page 7 of 12