HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 1/2
DB3
TRIGGER DIODES (Package DO-35)
Description
High reliability glass passivation insuring parameter stability and against contamination.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -40 ~ +125
°C
Junction Temperature ........................................................................................... -40 ~ +110
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 150 mW
•
Maximum Voltages and Currents
Breakover Voltage .............................................................................................................. 32 V
Breakover Voltage symmetry ..............................................................................................
±3
V
Repetitive peak on-state Current .......................................................................................... 2 A
Characteristics
(Ta=25°C)
Symbol
VBO
[ |+VBO| ]-[ |-VBO| ]
IV±I
VO
IBO
tr
IB
Min.
28
-
5
5
-
-
-
Typ.
32
-
-
-
-
1.5
-
Max.
36
±3
-
-
50
-
10
Unit
V
V
V
V
uA
uS
uA
Test Conditions
C=22nF
C=22nF
I=[ IBO to IF=10mA ]
C=22nF
VB=0.5 VBO max
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
