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H2N6427 参数 Datasheet PDF下载

H2N6427图片预览
型号: H2N6427
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 38 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号H2N6427的Datasheet PDF文件第1页浏览型号H2N6427的Datasheet PDF文件第3页  
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100k
10000
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.15
Page No. : 2/3
Saturation Voltage & Collector Current
hFE @ V
CE
=5V
Saturation Voltage (mV)
V
BE(sat)
@ I
C
=1000I
B
1000
V
CE(sat)
@ I
C
=1000I
B
V
CE(sat)
@ I
C
=100I
B
hFE
10k
1k
1
10
100
1000
100
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
On Voltage & Collector Current
10000
100
Capacitance & Reverse-Biased Voltage
Capacitance (pF)
On Voltage (mV)
1000
10
Cob
V
BE(on)
@ V
CE
=5V
100
1
10
100
1000
1
0.1
1
10
100
Collector Current (mA)
Reverse-Biased Voltage (V)
Safe Operating Area
10000
PT=1ms
700
600
PD-Ta
PT=100ms
Collector Current-I
C
(mA)
1000
PT=1s
100
Power Dissipation-PD(mW)
500
400
300
200
100
10
1
1
10
100
0
0
20
40
60
80
100
o
120
140
160
Forward Voltage-V
CE
(V)
Ambient Temperature-Ta( C)
HSMC Product Specification